MOS-semiconductor power component e.g. MOS power transistor, operating temperature measuring method, involves measuring electrical resistance of gate electrode, and determining temperature of power component from resistance

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This patent describes a method for measuring the operating temperature of MOS-semiconductor power components, such as MOS power transistors. The technique directly measures the electrical resistance of the gate electrode between two contact points and calculates the component's temperature based on this resistance value. This allows real-time temperature monitoring during operation.

Use CasesContent extracted from patent full text and abstract with AI.

• Real-time monitoring of MOS power transistor temperatures in power electronics
• Embedded temperature sensing in smart power modules
• Protection systems for power devices to avoid overheating
• Failure analysis and reliability testing of semiconductor components
• Industrial automation and control systems requiring precise thermal management

BenefitsContent extracted from patent full text and abstract with AI.

• Provides direct and accurate temperature measurements of power semiconductors during operation
• Enables early detection of overheating, helping to prevent device failure
• Eliminates the need for external temperature sensors, reducing system complexity and cost
• Facilitates improved reliability and safety in electronic power systems
• Can be integrated into existing semiconductor fabrication and device design

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Patent Abstract

The method involves arranging contact points (8,9) at a preset distance to a gate electrode (4), and defining a clear electrically conductive measuring section (M2) between the contact points. An electrical resistance of the gate electrode is directly measured when operating a MOS-semiconductor power component with a gate voltage between the contact points by a measuring voltage superimpose the gate voltage. Temperature of the power component is determined from the electrical resistance. The gate electrode is divided into measuring sections with the contact points. An independent claim is also included for a method for measuring temperature-dependent resistances of gate electrodes.