Method for Operating Temperature Control of a MOS-Controlled Semiconductor Power Device and Device for Carrying Out the Method

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This patent describes a technique and a corresponding device for monitoring and controlling the operating temperature of MOS-controlled semiconductor power components. The invention uses the temperature-dependent electrical resistance of the gate electrode material to measure temperature in real time during device operation, by applying a test voltage overlaid on the control voltage. By using multiple electrically isolated measurement paths across the gate electrode, it can monitor specific locations, allowing targeted temperature regulation and prevention of overheating (so-called 'hot-spots'), thereby improving reliability and performance of the semiconductor device.

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• Power electronics (e.g., power MOSFETs or IGBTs) in electric vehicles or industrial drives where efficient thermal management is critical.
• Semiconductor power modules in renewable energy converters (like solar inverters or wind power electronics).
• Smart power integrated circuits where distributed thermal measurement and control are required for safe operation.
• High-density electronic systems prone to local overheating (such as server farms, data centers, or telecommunication base stations).
• Consumer electronics or computing devices utilizing high-power chips that need to maximize performance without exceeding thermal limits.

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• Enables precise, real-time measurement and control of the operating temperature during device operation without the need for additional temperature sensors, saving chip area and cost.
• Allows location-specific (spatially resolved) temperature monitoring to detect and counteract dangerous hot-spots, thereby increasing device reliability and preventing thermal damage.
• Improves the possibility to operate semiconductor devices closer to their thermal and electrical maximum ratings, thus optimizing performance and energy efficiency.
• Reduces response delay in temperature regulation compared to traditional thermal management approaches, due to direct temperature measurement at the active regions.
• Flexible design supports integration into both standalone power devices and integrated circuits, broadening the scope of potential applications.

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Patent Abstract

Disclosed is a method for electrically controlling the operating temperature of MOS-controlled semiconductor power components. In said method, the electric resistance of the gate electrode material, and thus the temperature, is measured between two contact points (8, 9) on the gate electrode (4) by means of a test voltage that is superimposed on the gate voltage (UG) during operation of the component, the temperature coefficient of the electric resistance being known. The power loss on the gate electrode is adjusted by means of the gate voltage according to the measured temperature. If a plurality of pairs of contact points are provided, at least one of which is disposed in parts of the gate electrode (4) that are electrically isolated from each other, the temperature can be measured and controlled in a location-specific and accurate manner and quasi without delay. Components comprising additional contacts for carrying out said method are also described.